Search results for " Resistive Switching"

showing 4 items of 4 documents

Electrochemically Prepared High-k Thin Films for Resistive Switching Devices

Electrochemical oxidationReRAMSettore ING-IND/23 - Chimica Fisica ApplicataHigh-k materialResistive switchingAnodic oxides; Electrochemical oxidation; High-k materials; Resistive switching; ReRAMAnodic oxide
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Field- and irradiation-induced phenomena in memristive nanomaterials

2016

The breakthrough in electronics and information technology is anticipated by the development of emerging memory and logic devices, artificial neural networks and brain-inspired systems on the basis of memristive nano-materials represented, in a particular case, by a simple 'metal-insulator-metal' (MIM) thin-film structure. The present article is focused on the comparative analysis of MIM devices based on oxides with dominating ionic (ZrOx, HfOx) and covalent (SiOx, GeOx) bonding of various composition and geometry deposited by magnetron sputtering. The studied memristive devices demonstrate reproducible change in their resistance (resistive switching - RS) originated from the formation and …

Resistive touchscreenSettore FIS/02 - Fisica Teorica Modelli E Metodi MatematiciOxideIonic bondingNanotechnology02 engineering and technologyMemristorSputter deposition021001 nanoscience & nanotechnologyCondensed Matter Physics01 natural sciences010305 fluids & plasmasNanomaterialslaw.inventionIonchemistry.chemical_compoundchemistrylaw0103 physical sciences0210 nano-technologyMemristor resistive switching metal-oxide-metal nanostructure kinetic Monte-Carlo simulation radiation tolerance synaptic behaviour nonlinear dynamics stochastic resonanceElectrical conductor
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Resistive switching in memristors based on yttria-stabilized zirconia

2021

yttria-stabilized zirconiaresistive switchingResistive Random Access Memorylight- and noise-induced resistive switchingstochastic resonanceMemristormetal-insulator-metal structuremetal-insulator-semiconductor structurespace-charge-limited current
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Anodic TiO2 in ReRAM: Influence of Si-doping on the Resistive Switching Properties of Titanium Oxide

2016

TiO2 has attracted much attention due to its potential widespread applications, including capacitors, photocatalysis, solar energy conversion and, more recently, redox-based random access memories (ReRAM). For micro and nano-electronics applications, TiO2 is usually grown through Chemical and Physical Vapour Deposition techniques, such as Atomic Layer Deposition (ALD), Pulsed Laser Deposition (PLD), Sputtering and so on. In ReRAM field, the control of oxide structure (crystallinity, defects concentration etc.) and the choice of electrodes are crucial to have resistive switching phenomena inside the oxide. Thus, anodizing can be proposed as a simple and low cost way to grow TiO2 and to tune …

Settore ING-IND/23 - Chimica Fisica ApplicataAnodizing TiO2 ReRAM Si-doping Resistive Switching ReRAMSettore ING-INF/01 - Elettronica
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